Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2964181
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La aluminate (La2O3)(x)(Al2O3)(1-x) films were grown by atomic layer deposition method, for which the conduction band offset, valence band offset, and band gap were obtained by using x-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The valence band offsets were nearly unchanged within the range from 2.23 to 2.37 eV with increasing Al content. The conduction band offsets were changed from 2.40 to 2.86 eV for the above dielectrics. Remarkably, the band gap could be engineered from 5.75 to 6.35 eV by increasing Al content. We also found that La aluminate films have symmetric band profiles.
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