Near-ultraviolet photodetector based on hybrid polymer/zinc oxide nanorods by low-temperature solution processes

In this article, we have proposed a nanostructured near-ultraviolet photodetector (< 400 nm) based on the ZnO nanorod/polyfluorene hybrid by solution processes at low temperature. The current-voltage characteristic of the hybrid device demonstrates the typical pn-heterojunction diode behavior, consisting of p-type polymer and n-type ZnO nanorods, respectively. The relative quantum efficiencies of the hybrid device exhibit a nearly three order difference while illuminated under UV and visible light, respectively. The responsivity for the device can reach to 0.18 A/W at 300 nm by applying a bias of -2 V, which provides a route to fabricate a low-cost near-UV photodetector. (c) 2008 American Institute of Physics.