Silicon resonant cavity enhanced photodetector based on the internal photoemission effect at 1.55 μm:: Fabrication and characterization

In this paper, the realization and the characterization of a resonant cavity enhanced (RCE) photodetector, completely silicon compatible and working at 1.55 mu m, are reported. The detector is a RCE structure incorporating a Schottky diode and its working principle is based on the internal photoemission effect. Taking advantage of a Cu/Si Schottky diode fed on a high reflectivity Bragg mirror, an improvement in responsivity at 1.55 mu m is experimentally demonstrated. (C) 2008 American Institute of Physics.