Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 38, Issue 1, Pages 22-25Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/38/1/005
Keywords
-
Categories
Ask authors/readers for more resources
In this study, thin films of Cu(In,Ga)Se-2 were prepared by the controlled reaction of thermally evaporated InSe/Cu/GaSe precursors with elemental Se vapour in vacuum. We indicate that this classical two-step growth process can be utilized to produce homogeneous single-phase chalcopyrite absorber films with superior structural properties. X-ray diffraction studies indicated that the interplanar spacing d((112)) decreases linearly with an increase in the Ga/[In + Ga] atomic ratio due to homogeneous incorporation of gallium into the chalcopyrite lattice. Optical studies revealed the expected systematic increase in the band gap with increasing gallium concentration, once again confirming the monophasic nature of the alloys.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available