Journal
APPLIED PHYSICS LETTERS
Volume 86, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1851592
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We utilize a highly sensitive electron spin resonance technique called spin-dependent recombination to observe deep level dangling bond centers at and very near the SiC/SiO2 interface in fully processed n-channel 4H-SiC lateral metal-oxide-semiconductor field-effect transistors. The axially symmetric g tensor of the largest signal strongly suggests that the responsible defect is a dangling bond center with the dangling bond orbital pointing along the crystalline c axis. (C) 2005 American Institute of Physics.
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