Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 1, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2954015
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Funding
- EPSRC [EP/E06454X/1, EP/C539524/1, EP/C539516/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/C539516/1, EP/E06454X/1, EP/C539524/1] Funding Source: researchfish
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Reduction in the operating voltage of organic transistors is of high importance for successful implementation in low-power electronic applications. Here we report on low-voltage n-channel transistors fabricated employing a combination of soluble organic semiconductors and a self-assembled gate dielectric. The high geometric capacitance of the nanodielectric allows transistor operation below 2 V. Solution processing is enabled by analysis of the surface energy compatibility of the dielectric and semiconductor solutions. Electron mobilities in the range of 0.01-0.04 cm(2)/V s and threshold voltages <= 0.35 V are demonstrated. The present work paves the way toward solution processable low-voltage/power, organic complementary circuits. (C) 2008 American Institute of Physics.
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