Low-voltage organic transistors based on solution processed semiconductors and self-assembled monolayer gate dielectrics

Reduction in the operating voltage of organic transistors is of high importance for successful implementation in low-power electronic applications. Here we report on low-voltage n-channel transistors fabricated employing a combination of soluble organic semiconductors and a self-assembled gate dielectric. The high geometric capacitance of the nanodielectric allows transistor operation below 2 V. Solution processing is enabled by analysis of the surface energy compatibility of the dielectric and semiconductor solutions. Electron mobilities in the range of 0.01-0.04 cm(2)/V s and threshold voltages <= 0.35 V are demonstrated. The present work paves the way toward solution processable low-voltage/power, organic complementary circuits. (C) 2008 American Institute of Physics.