Journal
APPLIED PHYSICS LETTERS
Volume 92, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2903505
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The highly conductive surface layers found in nearly all as-grown or annealed bulk ZnO wafers are studied by temperature-dependent Hall-effect and secondary-ion mass spectroscopy (SIMS) measurements. In this work, we have used annealing in N(2) at 900 degrees C, and forming gas (5% H(2) in N(2)) at 600 degrees C, to cause a large enough surface conduction that SIMS measurements can be reliably employed. The increased near-surface donor density, as determined from two-layer Hall-effect modeling, is consistent with an increased near-surface concentration of Al, Ga, and In atoms, resulting from diffusion. There is no evidence for participation of any donors involving H. (c) 2008 American Institute of Physics.
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