Journal
APPLIED PHYSICS EXPRESS
Volume 7, Issue 10, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/APEX.7.103001
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We show that the giant spin Hall effect (GSHE) magnetoresistive random access memory (MRAM) can enable better energy delay and voltage performance than MTJ spin torque devices at 10-30 nm scaled nanomagnet dimensions. We propose a dense bit cell composed of a folded electrode to enable scaling to sub-10 nm CMOS. We derive the energy-delay trajectory and energy-delay product of GSHE and MTJ devices with an energy minimum at the magnetic characteristic time. Optimized GSHE devices with PMA can enable low voltage (<0.1 V), scaled dimensions, and fast switching time (100 Ps) at an average switching energy approaching 100 aJ/bit. (C) 2014 The Japan Society of Applied Physics
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