4.5 Article

Synthesis of α-SiC from tetramethylsilane by chemical vapor deposition at high temperature

Journal

APPLIED PHYSICS EXPRESS
Volume 7, Issue 2, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.7567/APEX.7.025501

Keywords

-

Funding

  1. World Premiere Materials by the Ministry of Trade, Industry and Economy (MOTIE), Korea
  2. Korea Evaluation Institute of Industrial Technology (KEIT) [10037904] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

Ask authors/readers for more resources

Tetramethylsilane (TMS) is a common liquid-phase precursor that is used in the synthesis of beta-SiC by chemical vapor deposition (CVD). At temperatures above 1500 degrees C, however, it has been shown that C is also formed together with SiC. In this study, based on thermodynamic modeling, we report on the successful synthesis of single-phase SiC with no evidence of the inclusion of C from TMS through CVD at temperatures over 1900 degrees C. X-ray diffraction data showed that alpha-SiC phases are formed at temperatures over 2000 degrees C. On the basis of these results, TMS can be used as a precursor for a-SiC synthesis. (C) 2014 The Japan Society of Applied Physics

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.5
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available