Journal
APPLIED PHYSICS LETTERS
Volume 86, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1852089
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We investigate the effect of a small leakage current through the gate insulator on the stability oforganic single-crystal field-effect transistors (FETs). We find that, irrespective of the specific organic molecule and dielectric used, leakage current flowing through the gate insulator results in an irreversible degradation of the single-crystal FET performance. This degradation occurs even when the leakage current is several orders of magnitude smaller than the source-drain current. The experimental data indicate that a stable. operation requires the leakage current to be smaller than 10-9 A/cm(2). Our results also suggest that gate leakage currents may determine the lifetime of thin-film transistors used in applications. (C) 2005 American Institute of Physics.
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