Journal
APPLIED PHYSICS EXPRESS
Volume 6, Issue 8, Pages -Publisher
IOP Publishing Ltd
DOI: 10.7567/APEX.6.086502
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- New Energy and Industrial Technology Development Organization (NEDO), Japan
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We developed a donor doping technique for beta-Ga2O3 by using Si-ion (Si+) implantation. For the implanted Ga2O3 substrates with Si+ = 1 x 10(19) -5 x 10(19) cm(-3), a high activation efficiency of above 60% was obtained after annealing in a nitrogen gas atmosphere at a relatively low temperature of 900-1000 degrees C. Annealed Ti/Au electrodes fabricated on the implanted Ga2O3 layers showed ohmic behavior. The Ga2O3 with Si+ = 5 x 10(19) cm(-3) showed the lowest specific contact resistance and resistivity obtained in this work of 4.6 x 10(-6) Omega.cm(2) and 1.4m Omega.cm, respectively. (C) 2013 The Japan Society of Applied Physics
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