Related references
Note: Only part of the references are listed.Step-Stress Reliability Studies on AlGaN/GaN High Electron Mobility Transistors on Silicon with Buffer Thickness Dependence
Amalraj Frank Wilson et al.
APPLIED PHYSICS EXPRESS (2013)
Realization of compressively strained GaN films grown on Si(110) substrates by inserting a thin AlN/GaN superlattice interlayer
X. Q. Shen et al.
APPLIED PHYSICS LETTERS (2012)
Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias
Matteo Meneghini et al.
APPLIED PHYSICS LETTERS (2012)
AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)
S. Tripathy et al.
APPLIED PHYSICS LETTERS (2012)
Micro-Raman spectroscopy observation of field-induced strain relaxation in AlGaN/GaN heterojunction field-effect transistors
Shaobo Dun et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2012)
Strong luminescence of two-dimensional electron gas in tensile-stressed AlGaN/GaN heterostructures grown on Si substrates
Ki-Won Kim et al.
APPLIED PHYSICS LETTERS (2011)
Influence of deep-pits on the device characteristics of metal-organic chemical vapor deposition grown AlGaN/GaN high-electron mobility transistors on silicon substrate
S. Lawrence Selvaraj et al.
APPLIED PHYSICS LETTERS (2011)
Surface characterization of AlGaN grown on Si (111) substrates
Xu Pan et al.
JOURNAL OF CRYSTAL GROWTH (2011)
High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate
Sefa Demirtas et al.
MICROELECTRONICS RELIABILITY (2010)
Impact of ⟪110⟫ uniaxial strain on n-channel In0.15Ga0.85As high electron mobility transistors
Ling Xia et al.
APPLIED PHYSICS LETTERS (2009)
Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers
Susai Lawrence Selvaraj et al.
IEEE ELECTRON DEVICE LETTERS (2009)
GaN HEMT reliability
J. A. del Alamo et al.
MICROELECTRONICS RELIABILITY (2009)
High breakdown voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates
Y. Dora et al.
IEEE ELECTRON DEVICE LETTERS (2006)
Piezoelectric strain in AlGaN/GaN heterostructure field-effect transistors under bias
A Sarua et al.
APPLIED PHYSICS LETTERS (2006)
Enhancement of breakdown voltage by A1N buffer layer thickness in A1GaN/GaN high-electron-mobility transistors on 4 in. diameter silicon
S Arulkumaran et al.
APPLIED PHYSICS LETTERS (2005)
Micro-Raman investigation of strain in GaN and AlxGa1-xN/GaN heterostructures grown on Si(111)
S Tripathy et al.
JOURNAL OF APPLIED PHYSICS (2002)