Journal
APPLIED PHYSICS EXPRESS
Volume 5, Issue 12, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1143/APEX.5.124101
Keywords
-
Categories
Funding
- Ministry of Education, Culture, Sports, Science and Technology, Japan
- Japan Science and Technology Agency, Japan
- Ministry of Internal Affairs and Communications
- Grants-in-Aid for Scientific Research [24560398, 21226010] Funding Source: KAKEN
Ask authors/readers for more resources
We report the dependence of oscillation frequency on the well and barrier thicknesses in a resonant tunneling diode (RTD) terahertz oscillator integrated with a planar slot antenna. The oscillation frequency increased with decreasing well and barrier thicknesses because of the reduction in dwell time in the resonance region. Room-temperature fundamental oscillation of up to 1.31 THz with an output power of about 10 mu W was achieved in the RTD with a 3.9-nm-thick well and 1.0-nm-thick barriers. (C) 2012 The Japan Society of Applied Physics
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
