4.5 Article

Electroresistance Effect in Gold Thin Film Induced by Ionic-Liquid-Gated Electric Double Layer

Journal

APPLIED PHYSICS EXPRESS
Volume 5, Issue 2, Pages -

Publisher

JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/APEX.5.023002

Keywords

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Funding

  1. Ministry of Education, Culture, Sports, Science and Technology, Japan (MEXT) [21244058]
  2. Japan Society for the Promotion of Science (JSPS) [21224009]
  3. Global COE from MEXT
  4. NEXT from the Cabinet Office, Government of Japan
  5. Sumitomo Foundation, Japan
  6. CREST-JST, Japan
  7. Grants-in-Aid for Scientific Research [21244058, 11J08283, 21224009] Funding Source: KAKEN

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Electroresistance effect was detected in a metallic thin film using ionic-liquid-gated electric-double-layer transistors (EDLTs). We observed reversible modulation of the electric resistance of a Au thin film. In this system, we found that an electric double layer works as a nanogap capacitor with 27 (-25) MVcm(-1) of electric field by applying only 1.7V of positive (negative) gate voltage. The experimental results indicate that the ionic-liquid-gated EDLT technique can be used for controlling the surface electronic states on metallic systems. (C) 2012 The Japan Society of Applied Physics

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