Journal
APPLIED PHYSICS EXPRESS
Volume 5, Issue 3, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1143/APEX.5.031001
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Funding
- Ministry of Education, Culture, Sports, Science and Technology of Japan [18069010]
- ALCA, Japan Science and Technology Agency
- Grants-in-Aid for Scientific Research [18069010] Funding Source: KAKEN
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We grew a heterojunction combination of Mg-doped Ga-rich InGaN cladding and In-rich InGaN active layers on top of Si-doped GaN nanocolumns with a diameter of similar to 300 nm; the uniformly arranged and dislocation-free GaN nanocolumns contributed to the high crystalline quality of In-rich InGaN, which led to the longest-wavelength (1.46 mu m) operation of InGaN light emitting diodes. The In content of the active layer estimated from the emission peak wavelength was 0.86. The selected-area diffraction analysis in the transmission electron microscope for the InGaN layers evinced that the In contents of the Ga-rich and In-rich InGaN layers were approximately 0.3 and 0.85, respectively. (c) 2012 The Japan Society of Applied Physics
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