Journal
APPLIED PHYSICS EXPRESS
Volume 5, Issue 2, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1143/APEX.5.021101
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Funding
- industrial strategic technology development program [KI002182]
- Information Display RD Center [F0004043-2010-33]
- Ministry of Knowledge Economy (MKE, Korea)
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We investigated the variation of electrical performances of solution-processed zinc tin oxide thin-film transistors (ZTO TFTs) when their channel layer was exposed to ambient gases at room temperature. During our research, we observed that adsorption of H2O on the backchannel surface can act as an electron trap and/or donor, depending on the amount of H2O. In addition, we found that the abnormal behavior seen in the TFTs was caused by different rates of adsorption/desorption. Finally, the instability in the electrical characteristics of the ZTO TFTs caused by the ambient atmosphere can easily be reversed by vacuum seasoning. (C) 2012 The Japan Society of Applied Physics
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