Journal
APPLIED PHYSICS EXPRESS
Volume 5, Issue 9, Pages -Publisher
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/APEX.5.094101
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Funding
- Ministry of Education, Culture, Sports, Science and Technology, Japan [C09]
- JSPS
- Grants-in-Aid for Scientific Research [10J05864, 24656230] Funding Source: KAKEN
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4H-SiC pn photodiodes were fabricated and the temperature dependence of the photoresponse was measured for various wavelengths (280365 nm) as a function of reverse-bias voltage. A temperature-independent photoresponse was obtained at 280 nm illumination from room temperature to 300 degrees C under zero-bias condition. By applying reverse-bias voltage up to 150 V, the wavelength of the temperature-independent photoresponse was varied from 280 to 300 nm. The temperature-independent photoresponse was explained by the temperature dependence of optical absorption coefficient together with surface recombination effect. (C) 2012 The Japan Society of Applied Physics
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