Hall-Effect Measurements of Sol-Gel Derived CuInS2 Thin Films for Photovoltaic Applications

CuInS2 thin films were prepared via the sol-gel process. X-ray diffraction (XRD) studies reveal that the thin films are well crystallized and they crystallize in a chalcopyrite phase. Hall-effect measurements were carried out, for the first time, on chalcopyrite CuInS2 films elaborated by the sol-gel method. Hence, the resistivity of the p-type CuInS2 films was found to be around 40 Omega.cm and the carrier density was in the 10(16) cm(-3) range. Furthermore, the UV-vis absorption spectra show that the energy bandgap is 1.47 eV, a value close to the most favorable bandgap (1.53 eV) for solar cells. (C) 2012 The Japan Society of Applied Physics