Related references
Note: Only part of the references are listed.Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer
Hideki Hirayama et al.
APPLIED PHYSICS EXPRESS (2010)
100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam
Takao Oto et al.
NATURE PHOTONICS (2010)
Far-ultraviolet plane-emission handheld device based on hexagonal boron nitride
Kenji Watanabe et al.
NATURE PHOTONICS (2009)
222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire
Hideki Hirayama et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2009)
231-261 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire
Hideki Hirayama et al.
APPLIED PHYSICS LETTERS (2007)
An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
Y Taniyasu et al.
NATURE (2006)