Electron Beam Lithography Using Highly Sensitive Negative Type of Plant-Based Resist Material Derived from Biomass on Hardmask Layer

We investigated electron beam (EB) lithography using a novel highly sensitive negative type of plant-based resist material derived from biomass on a hardmask layer for trilayer processes. The chemical design concept for using the plant-based resist material with glucose and dextrin derivatives was first demonstrated in the EB lithography. The 1 mu m line patterning images with highly efficient crosslinking properties and low film thickness shrinkage were provided under specific process conditions of EB lithography. The results shown reveal that the alpha-linked disaccharide formed by a 1,1-glucoside bond between two glucose units in dextrin derivatives was an important factor in controlling the highly sensitive EB patterning and developer properties. (C) 2011 The Japan Society of Applied Physics