Related references
Note: Only part of the references are listed.Gate-Recessed AlGaN/GaN Based Enhancement-Mode High Electron Mobility Transistors for High Frequency Operation
Stephan Maroldt et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2009)
V-gate GaNHEMTs for X-band power applications
Rongming Chu et al.
IEEE ELECTRON DEVICE LETTERS (2008)
Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode
Yong Cai et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2006)
High-performance E-mode AlGaN/GaN HEMTs
T. Palacios et al.
IEEE ELECTRON DEVICE LETTERS (2006)
Recessed-gate enhancement-mode GaNHEMT with high threshold voltage
WB Lanford et al.
ELECTRONICS LETTERS (2005)
High transconductance enhancement-mode AlGaN/GaN HEMTs on SiC substrate
V Kumar et al.
ELECTRONICS LETTERS (2003)
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
O Ambacher et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2002)