Journal
APPLIED PHYSICS EXPRESS
Volume 4, Issue 5, Pages -Publisher
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/APEX.4.055501
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Funding
- Japan Society for the Promotion of Science
- Grants-in-Aid for Scientific Research [22710107, 23340090] Funding Source: KAKEN
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We report the formation of GaAs quantum wires (QWRs) on (311)A substrates by droplet epitaxy. High-density quantum dots coalesce to form wires oriented along the [(2) over bar 33] direction as a result of atom diffusion triggered by thermal annealing. Luminescence from the QWRs is significantly polarized parallel to the wire direction, which would result in higher gain in lasers that use cleaved (01 (1) over bar) surfaces as Fabry-Perot mirrors. Lasing is obtained for a GaAs/AlGaAs QWR laser diode with fivefold-stacked QWR layers under pulsed operation at a low temperature. (C) 2011 The Japan Society of Applied Physics
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