Journal
APPLIED PHYSICS EXPRESS
Volume 4, Issue 4, Pages -Publisher
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/APEX.4.043005
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- Ministry of Education, Culture, Sports, Science and Technology, Japan (MEXT)
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We investigated the voltage-induced perpendicular magnetic anisotropy change in an epitaxial magnetic tunnel junction (MTJ) with an ultrathin FeCo layer. Tunneling magnetoresistance (TMR) curves were measured under various bias voltage applications for different FeCo thicknesses. Clear changes in the shape of TMR curves were observed depending on the voltage-controlled perpendicular magnetic anisotropy. By evaluating the relative angle of two ferromagnetic layers, we could estimate the anisotropy energy change quantitatively. The realization of voltage-induced anisotropy change in the MTJ structure makes it possible to control the magnetization dynamics, leading to a new area of electric-field-based spintronics devices. (C) 2011 The Japan Society of Applied Physics
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