Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar {20(2)over-bar1} GaN Substrates

Carrier/exciton localization in InGaN quantum wells (QWs) for green laser diodes fabricated on semi-polar {20 (2) over bar1} GaN substrates is assessed using time-resolved photoluminescence (TRPL) spectroscopy. The estimated characteristic energy, which represents the localization depth in a {20 (2) over bar1} InGaN QW, is 15.1 meV. This value is much smaller than that reported for c-plane green InGaN QWs, indicating a high compositional homogeneity of {20 (2) over bar1} InGaN QWs and consequently suggesting that the GaN semi-polar {20 (2) over bar1} plane is suitable for fabricating green laser diodes. (C) 2010 The Japan Society of Applied Physics DOI: 10.1143/APEX.3.021002