Journal
APPLIED PHYSICS EXPRESS
Volume 3, Issue 6, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1143/APEX.3.062101
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Funding
- U.S. Army Research Office [W911NF-09-C-0160]
- U.S. Army Research Laboratory [W911NF-07-2-0057, W911NF-10-2-0023]
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Single chip deep ultraviolet light-emitting diodes with junction area up to 1 mm(2) were fabricated for high power applications. Lateral geometry devices were designed for low operating voltage, uniform current spreading and emission resulting in substantial improvement of high current performance. The maximum CW optical power of 30 and 6 mW was achieved for devices emitting at 273 and 247 nm, respectively. (C) 2010 The Japan Society of Applied Physics
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