Journal
APPLIED PHYSICS EXPRESS
Volume 3, Issue 6, Pages -Publisher
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/APEX.3.062201
Keywords
-
Categories
Funding
- Ministry of Education, Culture, Sports, Science and Technology, Japan
- Japan Society for the Promotion of Science
Ask authors/readers for more resources
Lasing oscillation from a GaAs1-xBix/GaAs semiconductor chip with a Fabry-Perot cavity is acheived for the first time by photo-pumping. The GaAs0.975Bi0.025 active layer was grown at a very low temperature of 350 degrees C by molecular beam epitaxy. The characteristic temperature of the laser was 83 K between 150 and 240 K. The lasing emission peak energy decreased at a constant rate of -0.18 meV/K, which is only 40% of the temperature coefficient of the GaAs band gap in this temperature range. Above 240 K, the lasing threshold pumping power increased sharply, and the lasing emission peak energy started shifting to a shorter wavelength. (C) 2010 The Japan Society of Applied Physics
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available