Journal
APPLIED PHYSICS EXPRESS
Volume 3, Issue 5, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1143/APEX.3.053003
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- New Energy and Industrial Technology Development Organization (NEDO)
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We fabricated perpendicularly magnetized MgO-based magnetic tunnel junctions (p-MgO-MTJs) with a [Co/Pt](n)/CoFeB/CoFe bottom electrode layer (free layer) and a CoFe/CoFeB/TbFeCo top electrode layer (reference layer). The insertion of thin CoFeB/CoFe layers at the barrier/electrode interfaces and post-annealing at a relatively low temperature of 225 degrees C simultaneously yielded high magnetoresistance (MR) ratios of up to 85% at room temperature and a low resistance-area (RA) product of 4.4 Omega mu m(2). Such a high MR ratio in low-RA p-MgO-MTJs is the key to developing ultrahigh-density spin-transfer-torque magnetoresistive random access memories (MRAMs). (C) 2010 The Japan Society of Applied Physics
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