Journal
APPLIED PHYSICS EXPRESS
Volume 3, Issue 10, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1143/APEX.3.102101
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Funding
- Solid State Lighting and Energy Center at UCSB
- National Science Foundation (NSF)
- Materials Research Science and Engineering Center (MRSEC) of the National Science Foundation [DMR05-20415]
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The first 30-mW-class semipolar blue light-emitting diode (LED) on a free-standing (10 (1) over bar(1) over bar) GaN substrate has been demonstrated by using microscale periodic backside structures. The light extraction efficiency and corresponding output power were greatly enhanced, by up to 2.8-fold (bare chip) compare with conventional devices. At a driving current of 20 mA, the LED showed an output power of 31.1mW and an external quantum efficiency of 54.7%. Semipolar GaN LED technology is now comparable to commercial c-plane blue LED technology, not only in terms of internal material properties but also in terms of chip processing techniques. (C) 2010 The Japan Society of Applied Physics
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