Journal
APPLIED PHYSICS EXPRESS
Volume 3, Issue 12, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1143/APEX.3.121201
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Funding
- Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program)
- Japan Society for the Promotion of Science [21226008]
- Ministry of Education, Culture, Sports, Science and Technology, Japan
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Carrier lifetimes in n-type 4H-SiC epitaxial layers are limited by several factors such as deep levels, surface recombination, and recombination in the substrate. In this study, the carrier lifetime is significantly improved from 0.68 to 13.1 mu s by eliminating deep levels and by improving surface passivation. Deep levels can be almost eliminated by two-step annealing as reported before, and the surface recombination can be reduced by passivating the surface with a deposited oxide annealed in nitric oxide at 1300 degrees C. Major recombination paths are discussed based on numerical simulation. (C) 2010 The Japan Society of Applied Physics
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