Journal
APPLIED PHYSICS EXPRESS
Volume 3, Issue 7, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1143/APEX.3.075601
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Funding
- New Energy and Industrial Technology Development Organization Project
- Nanotechnology and Materials Technology
- Development of Nitride-Based Semiconductor Single Crystal Substrate and Epitaxial Growth Technology
- Japan Society for the Promotion of Science Research Fellowships for Young Scientists
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GaInN films with different In compositions were grown using a raised-pressure metalorganic vapor phase epitaxy (MOVPE) system operated from 100 to 200 kPa. A precise X-ray diffraction study showed that the In composition increases with an increasing pressure during growth, which is consistent with the result of a thermodynamic analysis. (C) 2010 The Japan Society of Applied Physics
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