Journal
APPLIED PHYSICS EXPRESS
Volume 3, Issue 1, Pages -Publisher
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/APEX.3.011002
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Funding
- National Nanotechnology Infrastructure Network
- NSF Materials Research Science and Engineering Centers (MRSEC) [DMR05-20415]
- Defense Advanced Research Programs Agency (DARPA)
- Visible InGaN Injection Lasers (VIGIL)
- UCSB's Solid State Light and Energy Center (SSLEC)
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We demonstrate electrically driven InGaN based laser diodes (LDs), with a simple AlGaN-cladding-free epitaxial structure, grown on semipolar (20 (2) over bar1) GaN substrates. The devices employed In(0.06)Ga(0.94)N waveguiding layers to provide transverse optical mode confinement. A maximum lasing wavelength of 506.4nm was observed under pulsed operation, which is the longest reported for AlGaN-cladding-free III-nitride LDs. The threshold current density (J(th)) for index-guided LDs with uncoated etched facets was 23 kA/cm(2), and 19 kA/cm(2) after application of high-reflectivity (HR) coatings. A characteristic temperature (T(0)) value of similar to 130 K and wavelength red-shift of similar to 0.05 nm/K were confirmed. (C) 2010 The Japan Society of Applied Physics
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