A Kinetic Model of Silicon Carbide Oxidation Based on the Interfacial Silicon and Carbon Emission Phenomenon

We proposed a kinetic model for thermal oxidation of silicon carbide, termed silicon and carbon emission model, taking into account the Si and C emissions from the oxidation interface, which lead to a reduction of interfacial reaction rate. We used this model to calculate oxide growth rates and found that the derived growth rates showed a good fit with the measured rates over the entire oxide thickness for both the C and Si faces. We discussed the difference in oxidation mechanism between these polar faces in terms of the difference in parameter values deduced from the curve fits. (C) 2009 The Japan Society of Applied Physics