Journal
APPLIED PHYSICS EXPRESS
Volume 2, Issue 12, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1143/APEX.2.122101
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Funding
- New Energy and Industrial Technology Development Organization of Japan
- Ministry of Education, Culture, Sports, Science and Technology of Japan [20760200]
- Grants-in-Aid for Scientific Research [20760200] Funding Source: KAKEN
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The fabrication of ZnTe light emitting diodes (LEDs) with thin film structure is reported. As a result of the reduced self-absorption, the output power of LED was greatly enhanced to approximately 45 mu W at the wavelength of 557 nm under an injection current of 10 mA at room temperature in spite of simple homo-junction structure. The wall-plug efficiency is comparable to that obtained in the commercially available GaP LED. (C) 2009 The Japan Society of Applied Physics DOI: 10.1143/APEX.2.122101
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