Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding

We have demonstrated AlGaN-cladding-free m-plane InGaN-based blue laser diodes (LDs) using a novel structure that employs 50-nm-thick n- and p-type In(x)Ga(1-x)N (x = 5-10%) as waveguiding layers. The thick, high In content InGaN waveguiding layers provided significant refractive index contrast to the GaN cladding layers, thereby eliminating the need for AlGaN cladding. Under pulsed operation, lasing was achieved at 442 nm with a threshold current density of 10 kA/cm(2). (C) 2009 The Japan Society of Applied Physics