Journal
APPLIED PHYSICS EXPRESS
Volume 2, Issue 7, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1143/APEX.2.071601
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- Japan Society for the Promotion of Science
- New Energy and Industrial Technology Development Organization (NEDO) of Japan
- Nanotechnology Network Japan of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan
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Thin-film transistors (TFTs) using a random network of semiconductor-enriched single-wall carbon nanotubes (SWCNTs) were fabricated on a SiO2/Si substrate. Semiconductor-enriched SWCNTs were extracted from a pristine sample by centrifugation using agarose gel. Prior to depositing the SWCNTs, the substrate surface was modified by self-assembly of a monolayer of aminosilanes to produce an ideal two-dimensional network structure. As a result, all the TFTs fabricated on the substrate had on/off current ratios higher than 10(4) without electrical breakdown, while TFTs fabricated using pristine SWCNTs had a broad distribution of on/off ratios from 10(1) to 10(4). This improvement in transfer characteristics demonstrates a major advantage of using semiconductor-enriched SWCNTs. (C) 2009 The Japan Society of Applied Physics
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