Strong Emission from GaInN/GaN Multiple Quantum Wells on High-Crystalline-Quality Thick m-Plane GaInN Underlying Layer on Grooved GaN

We fabricated GaInN/GaN multiple quantum wells (MQWs) on a high-crystalline-quality thick m-plane GaInN underlying layer, and the integral photoluminescence (PL) intensity was compared with that of the same GaInN/GaN MQWs on a high-crystalline-quality m-plane GaN underlying layer. The light emission wavelengths from the MOWs were violet (similar to 396 nm), blue (similar to 450 nm), and green (similar to 535 nm). The integral PL intensities obtained from the GaInN/GaN violet, blue, and green MQWs on the high-crystalline-quality thick GaInN underlying layer were 1.1, 1.5, and 2.1 times higher than these of the MOWs on the m-plane GaN underlying layer, respectively. (C) 2009 The Japan Society of Applied Physics