Journal
APPLIED PHYSICS EXPRESS
Volume 2, Issue 6, Pages -Publisher
JAPAN SOCIETY APPLIED PHYSICS
DOI: 10.1143/APEX.2.065502
Keywords
-
Categories
Funding
- Ministry of Education, Culture, Sports, Science and Technology of Japan [19310095]
- Grants-in-Aid for Scientific Research [19310095] Funding Source: KAKEN
Ask authors/readers for more resources
The epitaxial graphene growth mechanism on SiC(0001) surfaces is studied based on the energetics via the first-principles calculation. It is found that a Si terminated surface is important for the epitaxial growth of thin flat graphene sheets. This surface encourages the growth of graphene sheets because the surface Si atoms act as catalyst. Si desorbed sites trap excess C atoms, and form graphene islands. It is also found that the new graphene sheet prefers to grow just on the Si terminated surface of the SiC substrate even if the surface is covered with other graphene sheets. (c) 2009 The Japan Society of Applied Physics
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
