Journal
APPLIED PHYSICS EXPRESS
Volume 2, Issue 6, Pages -Publisher
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/APEX.2.061401
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- Ministry of Education, Culture, Sports, Science, and Technology of Japan
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In a newly proposed switching device using polycrystalline HfO2 thin film with ion diffusion path, we have found that a Cu electrode could contribute to improved switching performance. Current-voltage measurements at room temperature revealed clear resistive switching, not accompanied by a forming process, in our Cu/HfO2/Pt structure. The current step difference from one state to the other one was in the order of 10(3)-10(4), giving a sufficient on/off ratio. Voltage sweep polarity suggested that filamentary Cu paths were formed due to Cu ion diffusion and annihilated at the HfO2/Pt interface at reversed bias. This filament path formation and annihilation was the origin of the switching device performance. (C) 2009 The Japan Society of Applied Physics
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