Journal
APPLIED PHYSICS EXPRESS
Volume 2, Issue 1, Pages -Publisher
JAPAN SOCIETY APPLIED PHYSICS
DOI: 10.1143/APEX.2.011001
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- Solid State Lighting and Energy Center at University of California Santa Barbara
- General Electric Company
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The first demonstration of the m-plane AlGaN/GaN heterojunction field-effect transistor was reported. This transistor exhibited enhancement-mode operation, with the threshold voltage of +2.0 V owing to the nonpolar AlGaN/GaN heterojunction. The maximum drain-source current density and the maximum transconductance were 130 mA/mm at a gate-source voltage (V(gs)) of +9V and 25 mS/mm at V(gs) = +8V, respectively. The on-to-off ratio was over 10(6). (C) 2009 The Japan Society of Applied Physics
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