Journal
APPLIED PHYSICS EXPRESS
Volume 1, Issue 2, Pages -Publisher
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/APEX.1.021104
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A novel method for fabricating trench structures on GaN was developed. A smooth non-polar (1100) plane was obtained by wet etching using tetramethylammonium hydroxide (TMAH) as the etchant. A U-shape trench with the (1100) plane side walls was formed with dry etching and the TMAH wet etching. A U-shape trench gate metal oxide semiconductor field-effect transistor (MOSFET) was also fabricated using the novel etching technology. This device has the excellent normally-off operation of drain current-gate voltage characteristics with the threshold voltage of 10 V. The drain breakdown voltage of 180 V was obtained. The results indicate that the trench gate structure can be applied to GaN-based transistors. (c) 2008 The Japan Society of Applied Physics.
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