☆
4.5
Article
Dislocation reduction in AlGaN/GaN heterostructures on 4H-SiC by molecular beam epitaxy in the thermal decomposition regime
APPLIED PHYSICS EXPRESS (2008)
Rate this paper
The primary rating indicates the level of overall quality for the paper. Secondary ratings independently reflect strengths or weaknesses of the paper.
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationAdd your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload Now