Journal
NANO LETTERS
Volume 5, Issue 2, Pages 345-348Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl047931j
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Short channel (similar to80 nm) n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) with potassium (K) doped source and drain regions and high-K gate dielectrics (ALD HfO2) are obtained. For nanotubes with diameter similar to1.6 nm and band gap similar to0.55 eV, we obtain n-MOSFET-like devices exhibiting high on-currents due to chemically suppressed Schottky barriers at the contacts, subthreshold swing of 70 mV/decade, negligible ambipolar conduction, and high on/off ratios up to 10(6) at a bias voltage of 0.5 V. The results compare favorably with the state-of-the-art silicon n-MOSFETs and demonstrate the potential of SWNTs for future complementary electronics. The effects of doping level on the electrical characteristics of the nanotube devices are discussed.
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