4.5 Article

Examination of PbI2 and HgI2 photoconductive materials for direct detection, active matrix, flat-panel imagers for diagnostic X-ray imaging

Journal

IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 52, Issue 1, Pages 38-45

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2004.843135

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In this paper, the results of empirical studies of the dark current and X-ray signal response,of thick, polycrystalline films of lead iodide (PbI2) and mercuric iodide (HgI2) are reported. These studies are being carried out as part of an extensive, integrated program of research to develop and incorporate such photoconductive, X-ray detection materials into direct detection, active matrix flat-panel imagers (AMFPIs) for applications in diagnostic imaging, as well as for radiotherapy imaging. Simple detector configurations incorporating these materials were prepared by physical vapor deposition (PVD) with thicknesses ranging from approximately 90 to 500 mu m. For these detectors, the temporal behavior of the dark current and of the X-ray-induced photocurrent, under irradiation conditions relevant to fluoroscopy, radiography and mammography, were quantitatively examined and are reported. In addition, X-ray sensitivity results are also presented for a variety of conditions. The measurements were performed for externally applied electric fields ranging from 0.2 to 2.0 V/mu m. for both negative and positive polarities.

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