Journal
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume 117, Issue 1, Pages 125-129Publisher
SPRINGER HEIDELBERG
DOI: 10.1007/s00339-014-8287-5
Keywords
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Funding
- MICINN (Spain, Ministerio de Ciencia e Innovacion) [CTQ2010-15680]
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The spatio-temporal evolution of the silicon monoxide SiO plasma produced by a high-power CO2 pulsed laser has been investigated using optical emission spectroscopy (OES) and imaging methods. The formed plasma was found to be strongly ionized, yielding Si+, O+, Si2+, O2+ and Si3+ species, rich in neutral silicon and oxygen atoms, and very weak molecular bands of SiO time-integrated and time-resolved two-dimensional OES plasma profiles were recorded as a function of emitted wavelength and distance from the target. The temporal behavior of specific emission lines of Si, Si+, O+, Si2+ and O2+ was characterized. The results show a faster decay of O2+ and Si2+ than that of O+, Si+ and Si. The Stark broadening of isolated single-ionized silicon emission lines was employed for deducing the electron density during the plasma expansion. The relative intensities of two Si2+ lines were used to calculate the time evolution of the plasma temperature.
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