4.5 Article

Carrier-induced refractive index changes in InP-based circular microresonators for low-voltage high-speed modulation

Journal

IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 17, Issue 2, Pages 414-416

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2004.839773

Keywords

high speed; ion bombardment; low voltage; microresonators; modulators; tunable filters; wavelength-division multiplexing

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Optical InP-based microresonator modulators which achieve low-voltage high-bandwidth modulation are presented, where resonant wavelength tuning of a circular resonator by free carrier injection is used as the modulation mechanism., Since thermal effects in small resonant cavities and switching speed limitations posed by minority carrier lifetime are the primary concerns in such types of devices, ion bombardment in microtoroidal structures is used to increase the speed of response. the modulation speed is enhanced by an order of magnitude.

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