Journal
MICROSCOPY AND MICROANALYSIS
Volume 11, Issue 1, Pages 66-78Publisher
CAMBRIDGE UNIV PRESS
DOI: 10.1017/S1431927605050087
Keywords
off-axis electron holography; p-n junction; reverse bias; electrostatic potential; electric field; charge density; focused ion beam milling; specimen preparation
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Off-axis electron holography is used to measure electrostatic potential profiles across a silicon p-n junction, which has been prepared for examination in the transmission electron microscope (TEM) in two different specimen geometries using focused ion beam (FIB) milling. Results are obtained both from a conventional unbiased FIB-milled sample and using a novel sample geometry that allows a reverse bias to be applied to an FIB-milled sample in situ in the TEM. Computer simulations are fitted to the results to assess the effect of TEM specimen preparation on the charge density and the electrostatic potential in the thin sample.
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