Journal
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume 106, Issue 4, Pages 961-966Publisher
SPRINGER HEIDELBERG
DOI: 10.1007/s00339-011-6722-4
Keywords
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Funding
- National Natural Science Foundation of China [10975106]
- Science & Technology Plan Program of Suzhou City, Jiangsu Province, China [SYJG0901]
- Soochow University, China [5731500910]
- Qing Lan Project
- Priority Academic Program Development of Jiangsu Higher Education Institutions
- Natural Science Foundation of Jiangsu Province [11KJB140011]
- University of Jiangsu Province [CXZZ11_0085]
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Al-doped zinc oxide (AZO) films are prepared on quartz substrates by dual-ion-beam sputtering deposition at room temperature (similar to 25 degrees C). An assisting argon ion beam (ion energy E-i = 0-300 eV) directly bombards the substrate surface to modify the properties of AZO films. The effects of assisted-ion beam energy on the characteristics of AZO films were investigated in terms of X-ray diffraction, atomic force microscopy, Raman spectra, Hall measurement and optical transmittance. With increasing assisting-ion beam bombardment, AZO films have a strong improved crystalline quality and increased radiation damage such as oxygen vacancies and zinc interstitials. The lowest resistivity of 4.9 x 10(-3)Omega cm and highest transmittance of above 85% in the visible region were obtained under the assisting-ion beam energy 200 eV. It was found that the bandgap of AZO films increased from 3.37 to 3.59 eV when the assisting-ion beam energy increased from 0 to 300 eV.
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