Electronic structure and transport measurements of amorphous transition-metal oxides: observation of Fermi glass behavior

We characterized the conduction mechanisms in thin sputtered films of three representative binary Me-O (Me = Ta, W, and Nb) systems as a function of oxygen content, by combining in situ chemical state and electronic band structure studies from X-ray photoemission with temperature-dependent transport measurements. Despite certain differences, these amorphous films all displayed Fermi glass behavior following an oxidation-induced transition from metallic to hopping conduction, down to a sub-percolation threshold. The electron localization estimated from the band structure was in good agreement with that from the transport measurements, and the two were used to construct phase diagrams of conduction in the degree of oxidation-conductivity coordinates, which should prove important in the design of resistive switching and other electronic devices.