Journal
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume 112, Issue 1, Pages 1-7Publisher
SPRINGER
DOI: 10.1007/s00339-012-7169-y
Keywords
-
Funding
- Japan Society for the Promotion of Science [23510128]
- Ministry of Education, Culture, Sports, Science, and Technology
- Grants-in-Aid for Scientific Research [23510128] Funding Source: KAKEN
Ask authors/readers for more resources
Amorphous silicon nanowires (NWs), 3-50 nm thick and up to 4 mu m long, were grown by room-temperature continuous wave laser ablation of Si in high-pressure (0.1-0.9 MPa) Ar gas without the addition of any catalysts. The diameter and length of the NWs increased as the pressures of the ambient Ar increased. Sphere-like Si particles with diameters of 4-110 nm were observed at the tips of grown NWs and their diameters exhibited a strong correlation with the NW diameters. We propose a stress-driven self-catalytic vapor-liquid-solid mechanism to explain the growth of the NWs.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available