Journal
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume 106, Issue 3, Pages 511-515Publisher
SPRINGER
DOI: 10.1007/s00339-011-6756-7
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Funding
- National Science Foundation of China (NSFC) [60736005, 60425101-1]
- Foundation for Innovative Research Groups of the NSFC [60721001]
- Provincial project [9140A02060609DZ0208]
- SRF for ROCS, SEM [GGRYJJ08-05]
- Young Excellent Project of Sichuan Province [09ZQ026-074]
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A photodiode was fabricated based on well-aligned ZnO nanowire arrays (ZNAs) and regioregular poly(3-hexylthiophene-2,5-diyl) (P3HT) hybrid heterojunction. The current-voltage (I-V) characteristics of ITO/ZNAs/P3HT/Ag device in the dark and under illumination with a solar simulator were investigated in detail. The results demonstrated that the device showed good diode characteristics in the dark and under illumination. The device exhibited a high rectification ratio (RR) of 3211 at 2 V and a low turn-on voltage of 0.5 V in the dark. Also, the RR of the device as a function of illumination intensity was observed, and the transportation process of charge carriers in the diode under illumination was illuminated in terms of energy band diagram.
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